onsemi NGTB35N65FL2WG IGBT晶体管 650V/35A 快速IGBT FSII T

Technology: Si

Unit Weight: 38 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 300 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 70 A

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 70 A