onsemi NGTG12N60TF1G IGBT晶体管 600V 12A IGBT TO-3PF

Technology: Si

Unit Weight: 8 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 54 W

Continuous Collector Current: 20 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.4 V

Continuous Collector Current at 25 C: 24 A