onsemi NSS40600CF8T1G 双极晶体管 BJTs 低 VCES 40V PNP

Width: 1.65 mm

Height: 1.05 mm

Length: 3.05 mm

Technology: Si

Unit Weight: 11.780 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.4 W

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: - 6 A

Maximum DC Collector Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 250

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 180 mV