onsemi NSV60101DMTWTBG 双极晶体管 BJTs - 双极晶体管 DUAL 60V 1A LOWVCESA

Technology: Si

Unit Weight: 17 mg

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2.27 W

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 200 mV