onsemi NSVF4015SG4T1G 射频双极晶体管 BIP NPN 100MA 12V FT=10G

Technology: Si

Unit Weight: 35 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 10 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 450 mW

Emitter- Base Voltage VEBO: 2 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 12 V