onsemi NSVF6003SB6T1G 射频双极晶体管 BIP NPN 0.15A 12V FT=7G

Technology: Si

Unit Weight: 15 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 7 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 800 mW

Emitter- Base Voltage VEBO: 2 V

Continuous Collector Current: 150 mA

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 12 V