onsemi NSVJ6904DSB6T1G JFETs JFET -25V，20至40mA DUA

Technology: Si

Unit Weight: 40 mg

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 400 mW

Gate-Source Cutoff Voltage: - 1.2 V

Maximum Drain Gate Voltage: 25 V

Drain-Source Current at Vgs=0: 40 mA

Id - Continuous Drain Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 40 mS

Rds On - Drain-Source Resistance: 78 mOhms

Vgs - Gate-Source Breakdown Voltage: - 25 V

Vds - Drain-Source Breakdown Voltage: 25 V