onsemi NTB150N65S3HF MOSFETs 功率MOSFET N沟道SUPERFET III

Fall Time: 14 ns

Rise Time: 19 ns

Technology: Si

Unit Weight: 1.485 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 43 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 192 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 21 ns

Typical Turn-Off Delay Time: 63 ns

Id - Continuous Drain Current: 24 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 14 S

Rds On - Drain-Source Resistance: 150 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 3 V