onsemi NTHD4102PT1G MOSFET -20V -4.1A 双P沟道

Width: 1.65 mm

Height: 1.05 mm

Length: 3.05 mm

Fall Time: 12 ns

Rise Time: 12 ns

Technology: Si

Unit Weight: 85 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 8.6 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 600 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 5.5 ns

Typical Turn-Off Delay Time: 32 ns

Id - Continuous Drain Current: 4.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 7 S

Rds On - Drain-Source Resistance: 120 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V