onsemi NTJD4401NT1G MOSFET 20V 双N沟道ESD保护

Width: 1.25 mm

Height: 0.9 mm

Length: 2 mm

Fall Time: 506 ns

Rise Time: 227 ns

Technology: Si

Unit Weight: 290 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 1.3 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 550 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 83 ns

Typical Turn-Off Delay Time: 786 ns

Id - Continuous Drain Current: 910 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2 S

Rds On - Drain-Source Resistance: 375 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 600 mV