onsemi NTK3134NT5G MOSFET 20V/6V N 沟道 T1

Width: 0.8 mm

Height: 0.5 mm

Length: 1.2 mm

Fall Time: 4.8 ns

Rise Time: 4.8 ns

Technology: Si

Unit Weight: 1.275 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 550 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 6.7 ns

Typical Turn-Off Delay Time: 17.3 ns

Id - Continuous Drain Current: 890 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.6 S

Rds On - Drain-Source Resistance: 200 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 450 mV