onsemi NTMFS4D0N08XT1G 功率MOSFET，N沟道，80V，119A，3.5毫欧，DFN封装，5引脚，表面贴装

No. of Pins: 5

Channel Type: N Channel

Power Dissipation: 107 W

Transistor Mounting: Surface Mount

RDS(ON) Test Voltage: 10 V

Transistor Case Style: DFN

Drain Source Voltage Vds: 80 V

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 119 A

Drain Source On State Resistance: 3.5 mOhm

Gate Source Threshold Voltage Max: 3.6 V

Datasheet