onsemi NTMFS5H600NLT1G MOSFETs T8 60V 低COSS

Fall Time: 160 ns

Rise Time: 130 ns

Technology: Si

Unit Weight: 750 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 89 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 160 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 28 ns

Typical Turn-Off Delay Time: 88 ns

Id - Continuous Drain Current: 250 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 280 S

Rds On - Drain-Source Resistance: 1.1 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V