onsemi NVB072N65S3 MOSFET 单N沟道功率MOSFET SUPERFET III，易驱动，650 V，44 A，72 mohm，D2PAK

Fall Time: 32 ns

Rise Time: 50 ns

Technology: Si

Unit Weight: 1.485 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 82 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 312 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 26.3 ns

Typical Turn-Off Delay Time: 65.9 ns

Id - Continuous Drain Current: 44 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 29.7 S

Rds On - Drain-Source Resistance: 72 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V