onsemi NVH660S75L4SPFB 汽车用750V 660A SSDC电源模块平底板

Technology: Si

Mounting Style: Through Hole

Pd - Power Dissipation: 733 W

Gate-Emitter Leakage Current: 300 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 750 V

Collector-Emitter Saturation Voltage: 1.21 V