onsemi NVH660S75L4SPFB 汽车用750V 660A SSDC电源模块平底板
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ModelNVH660S75L4SPFB
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Technology: Si
Mounting Style: Through Hole
Pd - Power Dissipation: 733 W
Gate-Emitter Leakage Current: 300 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 750 V
Collector-Emitter Saturation Voltage: 1.21 V
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