onsemi NVH820S75L4SPB IGBT 硅模块 750V, 820A SSD
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ModelNVH820S75L4SPB
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Technology: Si
Unit Weight: 1.289 kg
Configuration: 6-Pack
Mounting Style: SMD/SMT
Pd - Power Dissipation: 1 kW
Gate-Emitter Leakage Current: 500 uA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 750 V
Collector-Emitter Saturation Voltage: 1.3 V
Continuous Collector Current at 25 C: 600 A
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