onsemi NVLUS4C12NTAG MOSFETs COMP UDFN6 30V 10.7A

Fall Time: 2.4 ns

Rise Time: 14 ns

Technology: Si

Unit Weight: 8.500 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Qg - Gate Charge: 18 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.54 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6.3 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 10.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 39 S

Rds On - Drain-Source Resistance: 9 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V