onsemi NVMFD5877NLWFT1G MOSFET功率MOSFET 60V 17A 39mOhm 双N沟道

Technology: Si

Unit Weight: 37.400 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 5.9 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 23 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 17 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 39 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 3 V