onsemi NVMFS6H858NT1G 沟槽型MOSFET 8 80V NFET

Fall Time: 13 ns

Rise Time: 17 ns

Technology: Si

Unit Weight: 175 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 8.9 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 42 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 19 ns

Id - Continuous Drain Current: 32 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 36 S

Rds On - Drain-Source Resistance: 20.7 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 2 V