onsemi NVMTSC1D3N08M7TXG MOSFETs PT7 80V DC PQFN8*8 扩展板

Fall Time: 32.8 ns

Rise Time: 29 ns

Technology: Si

Unit Weight: 319.280 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 196 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 5.1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 39.9 ns

Typical Turn-Off Delay Time: 80.9 ns

Id - Continuous Drain Current: 348 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 253 S

Rds On - Drain-Source Resistance: 1.25 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 4 V