onsemi NVVR26A120M1WSB 功率模块 SIC A1HPM 1200 V

Width: 55.2 mm

Height: 5 mm

Length: 55.2 mm

Fall Time: 51 ns

Rise Time: 59 ns

Technology: SiC

Configuration: Half-Bridge

Mounting Style: Screw Mount

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1 kW

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 125 ns

Typical Turn-Off Delay Time: 220 ns

Id - Continuous Drain Current: 400 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.2 V