onsemi NVXR17S90M2SPB EliteSiC 功率碳化硅 (SiC) 模块 - 用于牵引逆变器的 EliteSiC 功率模块，单面直接冷却，1.7mOhm，900V，6个装

Fall Time: 61 ns

Rise Time: 110 ns

Technology: SiC

Configuration: Module

Mounting Style: SMD/SMT

Pd - Power Dissipation: 1 kW

Vgs - Gate-Source Voltage: - 8 V, + 22 V

Typical Turn-On Delay Time: 122 ns

Typical Turn-Off Delay Time: 327 ns

Id - Continuous Drain Current: 620 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 2.1 mOhms

Vds - Drain-Source Breakdown Voltage: 900 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V