onsemi NVXR22S90M2SPM EliteSiC 功率模块 SIC 900V 6D MOSFET V-SSDC SPM

Fall Time: 48 ns

Rise Time: 94 ns

Technology: SiC

Configuration: Module

Mounting Style: SMD/SMT

Pd - Power Dissipation: 900 W

Vgs - Gate-Source Voltage: - 8 V, + 22 V

Typical Turn-On Delay Time: 106 ns

Typical Turn-Off Delay Time: 295 ns

Id - Continuous Drain Current: 510 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 2.7 mOhms

Vds - Drain-Source Breakdown Voltage: 900 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V