onsemi NXH020U90MNF2PTG SiC MOSFET 模块 SiC 模块，维也纳模块 900V，2 x 10 毫欧 SiC MOSFET，1200V，2 x 100A，F2 封装

Fall Time: 12.8 ns

Rise Time: 19.8 ns

Technology: SiC

Configuration: Dual Common Source

Mounting Style: Press Fit

Transistor Polarity: N-Channel

Vf - Forward Voltage: 2.3 V

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 352 W

Vgs - Gate-Source Voltage: - 8 V, + 18 V

Typical Turn-On Delay Time: 43.2 ns

Typical Turn-Off Delay Time: 110 ns

Id - Continuous Drain Current: 149 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 14 mOhms

Vds - Drain-Source Breakdown Voltage: 900 V

Vgs th - Gate-Source Threshold Voltage: 4.3 V