onsemi NXH200B100H4F2SG-R 1500V F2 BOOST太阳能PIM升压电源模块
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ModelNXH200B100H4F2SG-R
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Technology: Si
Mounting Style: SMD/SMT
Pd - Power Dissipation: 93 W
Gate-Emitter Leakage Current: 800 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1 kV
Collector-Emitter Saturation Voltage: 1.8 V
Continuous Collector Current at 25 C: 100 A
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