onsemi NXH200T120H3Q2F2SG 碳化硅 (SiC) MOSFET及模块
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ModelNXH200T120H3Q2F2SG
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IGBT Technology: IGBT [Trench/F
IGBT Termination: Solder
Power Dissipation: 679
IGBT Configuration: Three Level In
Transistor Mounting: Through Hole
Transistor Case Style: Module
Operating Temperature Max: 175 °C
Continuous Collector Current: 330
Collector Emitter Voltage Max: 1.2
Collector Emitter Saturation Voltage: 1.86
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