onsemi NXH300B100H4Q2F2PG SiC IGBT 模块 Si/SiC 混合模块，3 通道飞电容升压 1000 V，100 A IGBT，1200 V，30 A SiC 二极管

Technology: Si

Configuration: Dual Common Source

Pd - Power Dissipation: 194 W

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1 kV

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 73 A