onsemi NXH450B100H4Q2F2PG SiC IGBT 模块 Si/SiC 混合模块，3 通道对称升压 1000 V，150 A IGBT，1200 V，30 A SiC 二极管 压接引脚

Technology: Si

Configuration: Dual

Pd - Power Dissipation: 234 W

Gate-Emitter Leakage Current: 800 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 101 A