onsemi NXH450B100H4Q2F2PG-R Si/SiC 混合模块 1000V,75A FSIII IGBT，中速，带坚固防并联二极管，压接针脚

Technology: SiC, Si

Configuration: Triple

Mounting Style: Press Fit

Pd - Power Dissipation: 234 W

Gate-Emitter Leakage Current: 800 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 101 A