onsemi NXH600B100H4Q2F2PG IGBT模块 大众市场 第三代 Q2BOOST 带压入式引脚
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ModelNXH600B100H4Q2F2PG
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Technology: SiC, Si
Configuration: Single
Mounting Style: Press Fit
Pd - Power Dissipation: 187.5 mW
Gate-Emitter Leakage Current: 1 uA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1 kV
Collector-Emitter Saturation Voltage: 1.69 V
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