onsemi NXH600B100H4Q2F2SG Si/SiC 混合模块 大众市场 第三代 Q2BOOST
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ModelNXH600B100H4Q2F2SG
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Technology: SiC, Si
Configuration: Triple
Mounting Style: Screw Mount
Pd - Power Dissipation: 511 W
Gate-Emitter Leakage Current: 1 uA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1 kV
Collector-Emitter Saturation Voltage: 1.69 V
Continuous Collector Current at 25 C: 192 A
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