onsemi NXH800A100L4Q2F2S2G IGBT模块 IGBT模块，A型NPC 1000 V，800 A IGBT分离A型NPC负极，焊接引脚

Technology: Si

Configuration: Triple

Mounting Style: Press Fit

Pd - Power Dissipation: 714 W

Gate-Emitter Leakage Current: 2 uA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1 kV

Collector-Emitter Saturation Voltage: 1.69 V

Continuous Collector Current at 25 C: 309 A