onsemi NXH800H120L7QDSG IGBT模块 1200V 800A QDUAL3

Technology: Si

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 34.2 mW

Gate-Emitter Leakage Current: 80 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.65 V

Continuous Collector Current at 25 C: 1.6 kA