onsemi NXH80B120H2Q0SG SiC IGBT 模块 PIM 1200V 40A DU BST SiC 二极管
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ModelNXH80B120H2Q0SG
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Technology: SiC
Configuration: Dual
Mounting Style: Press Fit
Pd - Power Dissipation: 103 W
Gate-Emitter Leakage Current: 200 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2.2 V
Continuous Collector Current at 25 C: 40 A
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