onsemi NXH80T120L2Q0P2G IGBT 硅模块 PIM Q0 T型 NPC 80A 1200V 压接针
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ModelNXH80T120L2Q0P2G
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Technology: Si
Configuration: Quad
Mounting Style: SMD/SMT
Pd - Power Dissipation: 158 W
Gate-Emitter Leakage Current: 300 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2.1 V
Continuous Collector Current at 25 C: 67 A
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