onsemi NXH80T120L2Q0S2G IGBT 硅模块 PIM 1200V，80A TNPC 标准引脚排列
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ModelNXH80T120L2Q0S2G
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Technology: Si
Configuration: Half Bridge
Pd - Power Dissipation: 158 W
Gate-Emitter Leakage Current: 300 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2.05 V
Continuous Collector Current at 25 C: 80 A
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