onsemi NXH80T120L2Q0SG 晶体管IGBT模块 N沟道 1.2KV 65A 20针封装 180AB
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ModelNXH80T120L2Q0SG
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IGBT Technology: IGBT [Field St
IGBT Termination: Press Fit
Power Dissipation: 146
IGBT Configuration: Three Level In
Transistor Mounting: Screw Mount
Transistor Case Style: Module
Operating Temperature Max: 150 °C
Continuous Collector Current: 65
Collector Emitter Voltage Max: 1.2
Collector Emitter Saturation Voltage: 2.17
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