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Technology: Si
Unit Weight: 201 mg
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Polarity: P-Channel
Pd - Power Dissipation: 225 mW
Gate-Source Cutoff Voltage: 2.5 V
Drain-Source Current at Vgs=0: - 20 mA
Id - Continuous Drain Current: - 1 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 300 Ohms
Vgs - Gate-Source Breakdown Voltage: 30 V
