onsemi SMMBT2222ALT1G 双极晶体管 BJTs SS GP XSTR SPCL TR

Width: 1.3 mm

Height: 0.94 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 39 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 75 V

Continuous Collector Current: 600 mA

Maximum DC Collector Current: 1.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 1 V