onsemi UF3C120080B7S 碳化硅MOSFET，单个，N沟道，28.8安，1.2千伏，105毫欧，TO-263（D2PAK），7引脚

No. of Pins: 7

Channel Type: N Channel

Power Dissipation: 190 W

RDS(ON) Test Voltage: 12 V

Transistor Case Style: TO-263 (D2PAK)

Drain Source Voltage Vds: 1.2 kV

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 28.8 A

Mosfet Module Configuration: Single

Drain Source On State Resistance: 105 mOhm

Gate Source Threshold Voltage Max: 6 V