onsemi UF3C120080K4S 碳化硅MOSFET，单个，N沟道，33安，1.2千伏，100毫欧，TO-247，4针脚

No. of Pins: 4

Channel Type: N Channel

Power Dissipation: 254.2 W

RDS(ON) Test Voltage: 12 V

Transistor Case Style: TO-247

Drain Source Voltage Vds: 1.2 kV

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 33 A

Mosfet Module Configuration: Single

Drain Source On State Resistance: 100 mOhm

Gate Source Threshold Voltage Max: 6 V