onsemi UHB100SC12E1BC3N 碳化硅MOSFET，半桥，N沟道，100安，1.2千伏，12毫欧，PIM，18针

No. of Pins: 18

Channel Type: N Channel

Power Dissipation: 417 W

RDS(ON) Test Voltage: 12 V

Transistor Case Style: PIM

Drain Source Voltage Vds: 1.2 kV

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 100 A

Mosfet Module Configuration: Half Bridge

Drain Source On State Resistance: 12 mOhm

Gate Source Threshold Voltage Max: 6 V