PANASONIC DRA2522J0L Bipolar Transistor (BJT)

Rated power: 200mW

Mounting Type: Surface Mount

Power-Maximum: 200mW

Transistor type: PNP-Prebias

Collector current: 500mA

DC electricity gain: 20@100mA|10V

Resistance-Base (R1): 270Ohm

Vce Saturation (maximum): 250mV@5mA|100mA

Collector-emitter voltage: 50V

Resistance-Emitter base (R2): 5kOhm

DC current gain (hFE) (minimum): 20@100mA,10V

Current-Collector (Ic) (maximum): 500mA

Current-Collector cutoff (maximum): 500nA

Voltage-Collector-emitter breakdown (maximum): 50V