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Fall Time: 8.3 us
Rise Time: 5.2 us
Technology: Si
Unit Weight: 488.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 26 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 450 mW, 2.1 W
Vgs - Gate-Source Voltage: - 10.5 V, + 10.5 V
Typical Turn-On Delay Time: 4.1 us
Typical Turn-Off Delay Time: 12.9 us
Id - Continuous Drain Current: 8 A, 17 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 10 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 350 mV
