PANASONIC UNR222100L Pre-Biased Bipolar Transistor

R1/R2: 1

Mounting Type: Surface Mount

Power-Maximum: 200mW

Transistor type: NPN-Prebias

Collector current: 500mA

DC electricity gain: 40@100mA@10V

Frequency-Transition: 200MHz

Resistance-Base (R1): 2.2kOhms

Vce Saturation (maximum): 250mV@5mA,10mA

Collector-emitter voltage: 50V

Resistance-Emitter base (R2): 2.2kOhms

DC current gain (hFE) (minimum): 40@100mA,10V

Current-Collector (Ic) (maximum): 500mA

Current-Collector cutoff (maximum): 1uA

Voltage-Collector-emitter breakdown (maximum): 50V