PANASONIC UNR511T00L Pre-Biased Bipolar Transistor

R1/R2: 0.47

Mounting Type: Surface Mount

Power-Maximum: 150mW

Transistor type: PNP-Prebias

Collector current: 100mA

DC electricity gain: 80@5mA@10V

Frequency-Transition: 80MHz

Resistance-Base (R1): 22kOhms

Vce Saturation (maximum): 250mV@300uA,10mA

Collector-emitter voltage: 50V

Resistance-Emitter base (R2): 47kOhms

DC current gain (hFE) (minimum): 80@5mA,10V

Current-Collector (Ic) (maximum): 100mA

Current-Collector cutoff (maximum): 500nA

Voltage-Collector-emitter breakdown (maximum): 50V