PANJIT MMBT3906FN3_R1_00001 双极型晶体管 PNP 通用开关晶体管 VCE-40V IC-200mA DFN3L

Technology: Si

Unit Weight: 1.100 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 250 mW

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 400 mV