PANJIT PBHV9110DA-AU_R1_000A1 双极型晶体管 PNP 低 Vce(sat) 晶体管

Technology: Si

Unit Weight: 8.400 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.25 W

DC Current Gain hFE Max: 300 at - 500 mA, - 5 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 120 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100 at - 500 mA, - 5 V

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 430 mV