PANJIT PJA3409E_R1_00501 功率MOSFET，P沟道，30伏，3安，95毫欧，SOT-23封装，3引脚，贴片式

No. of Pins: 3

Channel Type: P Channel

Power Dissipation: 1.25 W

Transistor Mounting: Surface Mount

RDS(ON) Test Voltage: 10 V

Transistor Case Style: SOT-23

Drain Source Voltage Vds: 30 V

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 3 A

Drain Source On State Resistance: 95 mOhm

Gate Source Threshold Voltage Max: 2.3 V

Datasheet